BAR81...
Silicon RF Switching Diode
• Designed for use in shunt configuration in
high performance RF switches
• High shunt signal isolation
• Low shunt insertion loss
• Optimized for short - open transformation
using λ/4 lines
• Pb-free (RoHS compliant) package
BAR81W
"
!
Type
BAR81W
Package
SOT343
Configuration
single shunt-diode
LS(nH)
0.15*
Marking
BBs
* series inductance chip to ground
Maximum Ratings at T A = 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
VR
30
V
Forward current
IF
100
mA
Total power dissipation
Ptot
100
mW
Junction temperature
Tj
150
°C
Operating temperature range
Top
-55 ... 125
Storage temperature
Tstg
-55 ... 150
Ts ≤ 138°C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point1)
RthJS
≤ 120
K/W
1For
calculation of RthJA please refer to Application Note Thermal Resistance
1
2011-06-14
BAR81...
Electrical Characteristics at T A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
IR
-
-
20
nA
VF
-
0.93
1
V
DC Characteristics
Reverse current
VR = 20 V
Forward voltage
IF = 100 mA
AC Characteristics
pF
CT
Diode capacitance
VR = 1 V, f = 1 MHz
-
0.6
1
VR = 3 V, f = 1 MHz
-
0.57
0.9
rf
-
0.7
1
Ω
τ rr
-
80
-
ns
I-region width
WI
-
3.5
-
µm
Shunt Insertion loss1)
IL
-
30
-
dB
ISO
-
0.7
-
Forward resistance
IF = 5 mA, f = 100 MHz
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,
RL = 100 Ω
IF = 10 mA, f = 1.89 GHz
Shunt isolation1)
VR = 3 V, f = 1.89 GHz
Configuration of the shunt-diode
- A perfect ground is essential for optimum isolation
- The anode pins should be used as passage for RF
1For
more information please refer to Application Note 049.
2
2011-06-14
BAR81...
Diode capacitance CT = ƒ (VR)
Reverse parallel resistance RP = ƒ(VR)
f = Parameter
f = Parameter
10 4
1
KOhm
100 MHz
pF
10 3
Rp
CT
0.8
0.7
10 2
1 GHz
1.8 GHz
0.6
1 Mhz ... 1.8 GHz
10 1
0.5
0.4
10 0
0.3
0.2
0
2
4
6
8
10
12
14
16
V
10 -1
0
20
2
4
6
8
10
12
14
16
VR
V
20
VR
Forward resistance rf = ƒ (IF)
Forward current IF = ƒ (VF)
f = 100MHz
TA = Parameter
10 1
10 0
A
10 -1
Ohm
rf
IF
10 -2
10 0
10 -3
-40 °C
25 °C
85 °C
125 °C
10 -4
10 -5
10 -1 -2
10
10
-1
10
0
10
1
mA 10
10 -6
0
2
IF
0.2
0.4
0.6
0.8
V
1.2
VF
3
2011-06-14
BAR81...
Forward current IF = ƒ (TS )
Permissible Puls Load RthJS = ƒ (t p)
BAR81W
BAR81W
10 3
120
mA
K/W
100
RthJS
90
IF
80
70
10 2
60
50
10
40
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
1
30
20
10
0
0
15
30
45
60
90 105 120 °C
75
10 0 -6
10
150
TS
10
-5
10
-4
10
-3
10
-2
s
10
0
tP
Permissible Pulse Load
IFmax / IFDC = ƒ (t p)
BAR81W
IFmax/IFDC
10 2
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10 0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
tP
4
2011-06-14
Package SOT343
BAR81...
Package Outline
0.9 ±0.1
2 ±0.2
0.1 MAX.
1.3
0.1
A
1
2
0.1 MIN.
0.15
1.25 ±0.1
3
2.1 ±0.1
4
0.3 +0.1
-0.05
+0.1
0.15 -0.05
0.6 +0.1
-0.05
4x
0.1
0.2
M
M
A
Foot Print
1.6
0.8
0.6
1.15
0.9
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BGA420
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2.3
8
4
Pin 1
2.15
1.1
5
2011-06-14
BAR81...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office ().
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
6
2011-06-14
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